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880nm 10W Single Emitter LD Chip(350μm)
880nm 10W Single Emitter LD Chip(350μm)
Center wavelength
880nm
Output power
9.8 W
Operating current
10A
Operating voltage
1.73V
Emitting dimensions
350μm
Chip sizes
2500*500*150 μm
Divergence
8/35 degrees
Total conversion efficiency
56%
Center wavelength
880nm
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Product Description

    Shenzhen Raybow Optoelectronics Co., Ltd. , a manufacturer of high power semiconductor laser chips, announced the launch of a new 10W 880nm semiconductor laser chip, which is mainly used in the pumping field of solid state lasers.


    The new 10W 880nm semiconductor laser chip, RB-880A-350-10-2.5-SE, has a 350μm emitter width, a 2.5mm cavity length, a 56% photoelectric conversion efficiency, and a service life of over 20,000 hours. In addition, the chip also uses new epitaxial structure design and material epitaxy, advanced non-pump window design and preparation technology, dry and wet corrosion combined with self-alignment technology, control the consistency of strip width, especially to ensure high yield under mass production, reduce the cost of laser chip.



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