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808nm 10W Single Emitter LD Chip(190μm)
808nm 10W Single Emitter LD Chip(190μm)
Center wavelength
808nm
Output power
10.5W
Operating current
10A
Operating voltage
1.9V
Emitting dimensions
190μm
Chip sizes
4000*500*150 μm
Divergence
8/35 degrees
Total conversion efficiency
58%
Center wavelength
808nm
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Product Description

  Shenzhen Raybow Optoelectronics Co., Ltd. , a manufacturer of high-power semiconductor laser chips, announced the launch of a new 10W 808nm semiconductor laser chip, which is mainly used in solid state laser pumping, medical beauty, laser lighting, free-space optical communication and other fields.


    The new 10W 808nm semiconductor laser chip, RB-808B-190-10-4-SE, supports COS packaging, has a 190μm emitter width, a 4mm cavity length, a 58% photoelectric conversion efficiency and a service life of more than 20,000 hours. In addition, the chip also uses new epitaxial structure design and material epitaxy, advanced non-pump window design and preparation technology, dry and wet corrosion combined with self-alignment technology, control the consistency of strip width, especially to ensure high yield under mass production, reduce the cost of laser chip. At the same time, the adoption of new technology has greatly improved the high temperature resistance characteristics, so that it can be in the environment temperature of 60℃ or even higher temperature under the condition of continuous operation.







    In addition to 10W 808nm wavelength, Raybow Opto also supplies 3W/6W/8W 808nm chip, CW 50W 808nm Bar, QCW 300W 808nm Bar and other products to the market, welcome interested friends to come to consult and evaluate.